Low temperature epitaxial regrowth of mercury implanted sapphire

lon implantation and lo.w-temperature epitaxial regrowth of GaAs

Channeling and transmission electron microscopy have been used to investigate the parameters that govern the extent of damage in ion-implanted GaAs and the crystal quality following capless furnace annealing at low temperature ( -400 •q. The implantation-induced disorder showed a strong dependence on the implanted ion mass and on the substrate temperature during implantation. When the implantat...

Raman Measurements and Stress Analysis in Gal- lium Ion Implanted Gallium Nitride Epitaxial Lay- ers on Sapphire

In this article, we estimate hydrostatic stress developed in gallium ion implanted gallium nitride epitaxial layers using Raman measurements. We have calculated deformation potential constants for E2(high) mode in these epi-layers. The presence of a polar phonon-plasmon coupling in these systems has also been demonstrated. In as-implanted samples, with an increase in implantation fluence, we ha...

Epitaxial Catalyst-Free Growth of InN Nanorods onc-Plane Sapphire

We report observation of catalyst-free hydride vapor phase epitaxy growth of InN nanorods. Characterization of the nanorods with transmission electron microscopy, and X-ray diffraction show that the nanorods are stoichiometric 2H-InN single crystals growing in the [0001] orientation. The InN rods are uniform, showing very little variation in both diameter and length. Surprisingly, the rods show...

Aligned epitaxial SnO2 nanowires on sapphire: growth and device applications.

Semiconducting SnO2 nanowires have been used to demonstrate high-quality field-effect transistors, optically transparent devices, photodetectors, and gas sensors. However, controllable assembly of rutile SnO2 nanowires is necessary for scalable and practical device applications. Here, we demonstrate aligned, planar SnO2 nanowires grown on A-plane, M-plane, and R-plane sapphire substrates. These...

Hydrogen- and helium-implanted silicon: Low-temperature positron-lifetime studies.